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  ON Semiconductor Electronic Components Datasheet  

MMBTA55L Datasheet

Driver Transistors

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MMBTA55L pdf
MMBTA55L Series,
MMBTA56L Series,
SMMBTA56L Series
Driver Transistors
PNP Silicon
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
MMBTA55
MMBTA56, SMMBTA56
VCEO
−60
−80
Vdc
Collector −Base Voltage
MMBTA55
MMBTA56, SMMBTA56
VCBO
−60
−80
Vdc
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VEBO
IC
−4.0
−500
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
www.onsemi.com
SOT−23
CASE 318
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
2xx M G
G
1
2xx = Device Code
x = H for MMBTA55LT1G
xx = GM for MMBTA56LT1G,
SMMBTA56LT1G
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 1994
April, 2018 − Rev. 9
1
Publication Order Number:
MMBTA55LT1/D


  ON Semiconductor Electronic Components Datasheet  

MMBTA55L Datasheet

Driver Transistors

No Preview Available !

MMBTA55L pdf
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0)
MMBTA55
MMBTA56, SMMBTA56
V(BR)CEO
Vdc
−60 −
−80 −
Emitter −Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = −60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = −60 Vdc, IE = 0)
MMBTA55
(VCB = −80 Vdc, IE = 0)
MMBTA56, SMMBTA56
V(BR)EBO
ICES
ICBO
−4.0
−0.1
−0.1
−0.1
Vdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
hFE
100
100
Collector −Emitter Saturation Voltage
(IC = −100 mAdc, IB = −10 mAdc)
VCE(sat)
−0.25
Vdc
Base −Emitter On Voltage
(IC = −100 mAdc, VCE = −1.0 Vdc)
VBE(on)
Vdc
−1.2
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 4)
(IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz)
fT MHz
50 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
TURN-ON TIME
-1.0 V
VCC
+40 V
TURN-OFF TIME +VBB
VCC
+40 V
5.0 ms
+10 V
0
tr = 3.0 ns
100
Vin RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
5.0 ms
tr = 3.0 ns
100
Vin RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
www.onsemi.com
2


Part Number MMBTA55L
Description Driver Transistors
Maker ON Semiconductor
Total Page 5 Pages
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MMBTA55L pdf
MMBTA55L Datasheet PDF
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