MMBTA93LT1G - High Voltage Transistors

onsemi

Download the MMBTA93LT1G datasheet PDF. This datasheet also covers the MMBTA92LT1G variant, as both devices belong to the same high voltage transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

These Devices are Pb.
Free, Halogen Free/BFR Free and are RoHS Compliant.

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MMBTA93LT1G high voltage transistors by onsemi - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MMBTA92LT1G-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MMBTA93LT1G
Manufacturer	onsemi
File Size	98.15 KB
Description	High Voltage Transistors
Datasheet	MMBTA93LT1G Datasheet

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Other Datasheets by onsemi

Part Number	Description
MMBTA92LT1G	High Voltage Transistors
MMBTA05L	Driver Transistors
MMBTA06L	Driver Transistors
MMBTA06W	Driver Transistor
MMBTA06WT1	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MMBTA92LT1G, MMBTA93LT1G High Voltage Transistors PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol 92 93 Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current — Continuous DEVICE MARKING VCEO VCBO VEBO IC −300 −200 −300 −200 −5.0 −5.0 −500 Vdc Vdc Vdc mAdc MMBTA92LT1 = 2D; MMBTA93LT1 = 2E THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient Total Device Dissipation (Note 2) Alumina Substrate,(2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.