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  ON Semiconductor Electronic Components Datasheet  

MMBV3102LT1G Datasheet

Silicon Tuning Diode

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MMBV3102LT1G
Silicon Tuning Diode
This device is designed in the Surface Mount package for general
frequency control and tuning applications. It provides solidstate
reliability in replacement of mechanical tuning methods.
Features
High Q with Guaranteed Minimum Values at VHF Frequencies
Controlled and Uniform Tuning Ratio
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Current
Device Dissipation @ TA = 25°C
Derate above 25°C
VR 30 Vdc
IF 200 mAdc
PD 225 mW
1.8 mW/°C
Junction Temperature
TJ +125 °C
Storage Temperature Range
Tstg 55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
3
Cathode
1
Anode
3
1
2
SOT23 (TO236)
CASE 318
STYLE 8
MARKING DIAGRAM
M4CM G
G
1
M4C = Specific Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBV3102LT1G SOT23 3,000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 Rev. 4
1
Publication Order Number:
MMBV3102LT1/D


  ON Semiconductor Electronic Components Datasheet  

MMBV3102LT1G Datasheet

Silicon Tuning Diode

No Preview Available !

MMBV3102LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 mAdc)
V(BR)R
Reverse Voltage Leakage Current
(VR = 25 Vdc, TA = 25°C)
IR
Diode Capacitance Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
TCC
Min Typ Max
30
Unit
Vdc
− − 0.1 mAdc
300 ppm/°C
Device
MMBV3102LT1
Ct, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Min Nom Max
20 22 25
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz
Min
200
CR, Capacitance Ratio
C3/C25
f = 1.0 MHz
Min Typ
4.5 4.8
TYPICAL CHARACTERISTICS
40
36
32
28
24
20
16
12
8.0
4.0
0
0.3
f = 1.0 MHz
TA = 25°C
0.5 1.0 2.0 3.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
20 30
20
TA = 25°C
10 f = 50 MHz
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0 3.0 6.0 9.0 12 15 18 21 24 27 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Figure of Merit
100
10
1.0
0.1
0.01
0.001
-60
VR = 20 Vdc
1.04
1.03
VR = 3.0 Vdc
f = 1.0 MHz
1.02
1.01
1.00
0.99
-20 0 +20
+60 +100
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Leakage Current
0.98
0.97
0.96
+140 -75 -50 -25 0 +25 +50 +75 +100 +125
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Diode Capacitance
NOTES ON TESTING AND SPECIFICATIONS
1. CR is the ratio of CT measured at 3.0 Vdc divided by CT measured at 25 Vdc.
http://onsemi.com
2


Part Number MMBV3102LT1G
Description Silicon Tuning Diode
Maker ON Semiconductor
Total Page 3 Pages
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