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MMBV3401LT1G - Silicon Pin Diode

Features

  • Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability http://onsemi. com.
  • Low Capacitance.
  • 0.7 pF (Typ) at VR = 20 Vdc.
  • Very Low Series Resistance at 100 MHz.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant 0.34 W (Typ) @ IF = 10 mAdc 3 Cathode 1 Anode 3 1.

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Full PDF Text Transcription

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www.DataSheet4U.com MMBV3401LT1G Silicon Pin Diode This device is designed primarily for VHF band switching applications but is also suitable for use in general−purpose switching circuits. Supplied in a Surface Mount package. Features • Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability http://onsemi.com • Low Capacitance − 0.7 pF (Typ) at VR = 20 Vdc • Very Low Series Resistance at 100 MHz • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 0.34 W (Typ) @ IF = 10 mAdc 3 Cathode 1 Anode 3 1 MAXIMUM RATINGS Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR PD Value 35 200 2.
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