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  ON Semiconductor Electronic Components Datasheet  

MMBV3700LT1G Datasheet

High Voltage Silicon Pin Diodes

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MMBV3700LT1G
High Voltage Silicon Pin
Diodes
These devices are designed primarily for VHF band switching
applications but are also suitable for use in generalpurpose switching
circuits. They are supplied in a costeffective plastic package for
economical, highvolume consumer and industrial requirements.
They are also available in surface mount.
Features
Long Reverse Recovery Time trr = 300 ns (Typ)
Rugged PIN Structure Coupled with Wirebond Construction for
Optimum Reliability
Low Series Resistance @ 100 MHz
RS = 0.7 W (Typ) @ IF = 10 mA
Reverse Breakdown Voltage = 200 V (Min)
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Symbol
VR
PD
Value
200
200
2.8
Unit
V
mW
mW/°C
Junction Temperature
TJ
+125
°C
Storage Temperature Range
Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
SOT23
1
Anode
3
Cathode
3
1
2
MARKING
DIAGRAM
4R M G
G
1
SOT23 (TO236AB)
CASE 318 08
STYLE 8
4R = Specific Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBV3700LT1G SOT23 3000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 Rev. 5
1
Publication Order Number:
MMBV3700LT1/D


  ON Semiconductor Electronic Components Datasheet  

MMBV3700LT1G Datasheet

High Voltage Silicon Pin Diodes

No Preview Available !

MMBV3700LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (IR = 10 mA)
Diode Capacitance (VR = 20 V, f = 1.0 MHz)
Series Resistance (Figure 5) (IF = 10 mA)
Reverse Leakage Current (VR = 150 V)
Reverse Recovery Time (IF = IR = 10 mA)
Symbol
V(BR)R
CT
RS
IR
trr
Min Typ Max
200
− − 1.0
0.7 1.0
− − 0.1
300
Unit
V
pF
W
mA
ns
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
10
8.0
6.0
4.0
2.0
1.0
0.8
0.6
0.4
0.2
0.1
TYPICAL CHARACTERISTICS
800
TA = 25°C
700
600
500
400 TA = 25°C
300
200
100
2.0 4.0 6.0 8.0 10 12
IF, FORWARD CURRENT (mA)
Figure 1. Series Resistance
14
16
0
0.7 0.8 0.9
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.0
TA = 25°C
0 -10 -20 -30 -40 -50
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
100
40
10
4.0
1.0
0.4
0.1
0.04
0.01
0.004
0.001
-60
VR = 15 V
-20 0 +20
+60 +100
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Leakage Current
+140
http://onsemi.com
2


Part Number MMBV3700LT1G
Description High Voltage Silicon Pin Diodes
Maker ON Semiconductor
Total Page 3 Pages
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