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MMDF2C02ER2 - Power MOSFET

Download the MMDF2C02ER2 datasheet PDF. This datasheet also covers the MMDF2C02E variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • in.
  • to.
  • Source Leakage Current versus Voltage 1 0 4 8 12 16 VDS, DRAIN.
  • TO.
  • SOURCE.

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Note: The manufacturer provides a single datasheet file (MMDF2C02E-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for MMDF2C02ER2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MMDF2C02ER2. For precise diagrams, and layout, please refer to the original PDF.

MMDF2C02E Power MOSFET 2.5 Amps, 25 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They ...

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FETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a low reverse recovery time. MiniMOSt devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.

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