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  ON Semiconductor Electronic Components Datasheet  

MMDF2N02E Datasheet

Power MOSFET

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MMDF2N02E
Power MOSFET
2 Amps, 25 Volts
NChannel SO8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
draintosource diode has a low reverse recovery time. These devices
are designed for use in low voltage, high speed switching applications
where power efficiency is important. Typical applications are dcdc
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives. The avalanche energy is
specified to eliminate the guesswork in designs where inductive loads
are switched and offer additional safety margin against unexpected
voltage transients.
Features
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
IDSS Specified at Elevated Temperatures
Avalanche Energy Specified
Mounting Information for SO8 Package Provided
This is a PbFree Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current Continuous @ TA = 25°C
Drain Current Continuous @ TA = 100°C
Drain Current Single Pulse (tp 10 ms)
Total Power Dissipation @ TA = 25°C (Note 1)
Operating and Storage Temperature Range
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C (VDD = 20 Vdc,
VGS = 10 Vdc, Peak IL = 9.0 Apk,
L = 6.0 mH, RG = 25 W)
Thermal Resistance, JunctiontoAmbient
(Note 1)
VDSS
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
RqJA
25
± 20
3.6
2.5
18
2.0
55 to 150
245
Vdc
Vdc
Adc
Apk
W
°C
mJ
62.5 °C/W
Maximum Lead Temperature for Soldering
Purposes, 0.0625from case for 10 seconds
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on 2square FR4 board (1sq. 2 oz. Cu 0.06thick single sided) with
one die operating, 10 sec. max.
http://onsemi.com
2 AMPERES, 25 VOLTS
RDS(on) = 100 mW
NChannel
D
Discrete
(PbFree)
G
S
MARKING
DIAGRAM
8
1
SO8
CASE 751
STYLE 11
8
F2N02
AYWWG
G
1
F2N02 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Source1
Gate1
Source2
Gate2
1 8 Drain1
2 7 Drain1
3 6 Drain2
4 5 Drain2
ORDERING INFORMATION
Device
Package
Shipping
MMDF2N02ER2G SO8 2500 Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 8
1
Publication Order Number:
MMDFN02E/D


  ON Semiconductor Electronic Components Datasheet  

MMDF2N02E Datasheet

Power MOSFET

No Preview Available !

MMDF2N02E
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 2.2 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc, RG = 6.0 W)
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc, RG = 9.1 W)
Fall Time
Gate Charge
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 2)
(IS = 2.0 Adc, VGS = 0 Vdc)
Reverse Recovery Time
See Figure 11
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Storage Charge
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
Min Typ Max Unit
25
Vdc
mAdc
− − 1.0
− − 10
− − 100 nAdc
1.0 2.0 3.0
Vdc
0.083 0.100
0.110 0.200
W
1.0 2.6 Mhos
380 532 pF
235 329
55 110
7.0 21
17 30
27 48
18 30
10 30
35 70
19 38
25 50
10.6 30
1.3
2.9
2.7
ns
nC
1.0 1.4
Vdc
34 66 ns
17
17
0.03
mC
http://onsemi.com
2


Part Number MMDF2N02E
Description Power MOSFET
Maker ON Semiconductor
Total Page 7 Pages
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