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  ON Semiconductor Electronic Components Datasheet  

MMDF4P03HDR2 Datasheet

Power MOSFET

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MMDF4P03HDR2 pdf
MMDF4P03HD
Preferred Device
Power MOSFET
4 A, 30 V, PChannel SO8, Dual
Dual MOSFET devices are designed for use in low voltage, high
speed switching applications where power efficiency is important.
Typical applications are dcdc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current Continuous @ TA = 25°C
Drain Current Single Pulse (tp 10 ms)
Source Current Continuous @ TA = 25°C
Total Power Dissipation @ TA = 25°C
(Note 1)
VDSS
VGS
ID
IDM
IS
PD
30 Vdc
± 20 Vdc
4.0 Adc
20 Apk
1.7 Adc
2.0 Watts
Operating and Storage Temperature Range TJ, Tstg 55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc,
VDS = 20 Vdc, IL = 9.0 Apk,
L = 10 mH, RG = 25 W)
Thermal Resistance JunctiontoAmbient
Maximum Lead Temperature for Soldering
Purposes, (1/8from Case for 10 s)
EAS
RθJA
TL
450 mJ
62.5 °C/W
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1 Mounted on G10/FR4 glass epoxy board using minimum recommended
footprint.
http://onsemi.com
4 AMPERES
30 VOLTS
RDS(on) = 85 mW
PChannel
DD
GG
SS
8
1
SO8, Dual
CASE 751
STYLE 11
MARKING
DIAGRAM
8
DP0303
AYWW
1
A = Assembly Location
Y = Year
WW = Work Week
PIN ASSIGNMENT
Source1
Gate1
Source2
Gate2
18
27
36
45
Top View
Drain1
Drain1
Drain2
Drain2
ORDERING INFORMATION
Device
Package
Shipping
MMDF4P03HDR2 SO8 2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 3
1
Publication Order Number:
MMDF4P03HD/D


  ON Semiconductor Electronic Components Datasheet  

MMDF4P03HDR2 Datasheet

Power MOSFET

No Preview Available !

MMDF4P03HDR2 pdf
MMDF4P03HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 3.5 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)
Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 24 Vdc,
VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDD = 15 Vdc,
VGS = 10 Vdc,
ID = 1.0 Adc,
RG = 6.0 Ω)
Gate Charge
(See Figure 8)
(VDS = 10 Vdc,
ID = 3.5 Adc,
VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 1.7 Adc, VGS = 0 Vdc)
(IS = 1.7 Adc, VGS = 0 Vdc,
TJ = 125°C)
Reverse Recovery Time
Reverse Recovery Stored Charge
(IS = 3.5 Adc,
VGS = 0 Vdc,
dIS/dt = 100 A/μs)
2. Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
Min
30
1.0
Typ Max Unit
Vdc
−−
μAdc
1.0
20
100 nAdc
Vdc
−−
0.075
0.125
6.0
0.085
0.16
Ω
Mhos
425 600
209 300
57.2 80
pF
11.7
15.8
167.3
102.6
14.8
1.7
4.7
3.42
23.4
31.6
334.6
205.2
29.6
ns
nC
0.9
0.7
77.4
19.9
57.5
0.088
1.2
Vdc
ns
μC
http://onsemi.com
2


Part Number MMDF4P03HDR2
Description Power MOSFET
Maker ON Semiconductor
Total Page 8 Pages
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