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MMFT3055E Datasheet Power MOSFET

Manufacturer: onsemi

Overview: MMFT3055E Power MOSFET 1.7 Amp, 60 Volts N−Channel TMOS E−FETt SOT−223 This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and mutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, dc−dc converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

Key Features

  • Silicon Gate for Fast Switching Speeds.
  • Low RDS(on).
  • 0.15 Ω max.
  • The SOT.
  • 223 Package can be Soldered Using Wave or Reflow. The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die.
  • Available in 12 mm Tape and Reel Use MMFT3055ET1 to order the 7 inch/1000 unit reel. Use MMFT3055ET3 to order the 13 inch/4000 unit reel.

MMFT3055E Distributor