Download the MMFT3055ET3 datasheet PDF.
This datasheet also covers the MMFT3055E variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
Silicon Gate for Fast Switching Speeds.
Low RDS(on).
0.15 Ω max.
The SOT.
223 Package can be Soldered Using Wave or Reflow. The
Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die.
Available in 12 mm Tape and Reel
Use MMFT3055ET1 to order the 7 inch/1000 unit reel. Use MMFT3055ET3 to order the 13 inch/4000 unit reel.
Full PDF Text Transcription for MMFT3055ET3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MMFT3055ET3. For precise diagrams, and layout, please refer to the original PDF.
MMFT3055E Power MOSFET 1.7 Amp, 60 Volts N−Channel TMOS E−FETt SOT−223 This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanch...
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Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, dc−dc converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. Feature
MMFT3055ET3 Datasheet
