MMJT350T1 silicon equivalent, bipolar power transistors pnp silicon.
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* High Collector−Emitter Sustaining Voltage −
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VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc Excellent DC Current Gain − hFE = 30−240.
such as low power, line−operated series pass and switching regulators requiring PNP capability.
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