MMSF10N03Z
MMSF10N03Z is Power MOSFET manufactured by onsemi.
feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and mutation modes and the drain- to- source diode has a very low reverse recovery time. EZFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc- dc converters, and power management in portable and battery powered products such as puters, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.
- Zener Protected Gates Provide Electrostatic Discharge Protection
- Designed to Withstand 200 V Machine Model and 2000 V Human
Body Model
- Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
- Logic Level Gate Drive
- Can Be Driven by Logic ICs
- Miniature SO- 8 Surface Mount Package
- Saves Board Space
- Diode Is Characterized for Use In Bridge Circuits
- Diode Exhibits High Speed, With Soft Recovery
- IDSS Specified at Elevated Temperature
- Mounting Information for SO- 8 Package Provided
This document contains information on a new product. Specifications and information herein are subject to change without notice. http://onsemi.
10 AMPERES 30 VOLTS
RDS(on) = 13 m W
N- Channel D
MARKING DIAGRAM
SO- 8 CASE 751 STYLE 12
10N03Z LYWW
= Location Code
= Year
WW = Work Week
PIN ASSIGNMENT
Source Source Source
Gate
18 27 36 45 Top View
Drain Drain Drain Drain
ORDERING INFORMATION
Device
Package
Shipping
MMSF10N03ZR2 SO- 8 2500 Tape &...
