* igh switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltag
MMSF3350 Datasheet (287.30 KB)
MMSF3350
287.30 KB
Single n-channel mosfet.
MMSF3350 WaveFET™ HDTMOS™ Single N Channel Field Effect Transistor Power Surface Mount Products WaveFET devices are an advanced series of powe.
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