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  ON Semiconductor Electronic Components Datasheet  

MPS4250 Datasheet

PNP Transistor

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MPS4250
Transistor
PNP Silicon
Features
This is a PbFree Device*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector Emitter Voltage
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCES
VCBO
VEBO
IC
PD
40
40
40
5.0
50
625
5.0
Vdc
Vdc
Vdc
Vdc
mAdc
W
mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 W
Derate above 25°C
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient RqJA
200 °C/W
Thermal Resistance, JunctiontoCase
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
123
STRAIGHT LEAD
BULK PACK
12 3
TO92 1 WATT
(TO226)
CASE 2910
STYLE 1
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MPS
4250
AYWW G
G
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
August, 2010 Rev. 5
1
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MPS4250G
TO92 5000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MPS4250/D


  ON Semiconductor Electronic Components Datasheet  

MPS4250 Datasheet

PNP Transistor

No Preview Available !

MPS4250
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 5.0 mA)
Collector Emitter Sustaining Voltage (Note 1)
(IC = 5.0)
Collector Base Breakdown Voltage
(IC = 10 mA)
Emitter Base Breakdown Voltage
(IE = 10 mA)
Collector Cutoff Current
(VCB = 50 V)
(VCB = 40 V, TA = 65°C)
Emitter Cutoff Current
(VEB = 3.0 V)
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
Collector Emitter Saturation Voltage (Note 1)
(IC = 10 mA, IB = 0.5 mA)
Base Emitter Saturation Voltage (Note 1)
(IC = 10 mA, IB = 0.5 mA)
SMALLSIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 V, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 V, f = 1.0 MHz)
SmallSignal Current Gain
(IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz)
(IC = 0.5 mA, VCE = 5.0 V, f = 20 MHz)
Noise Figure
(IC = 20 mA, VCE = 5.0 V, RS = 10 kW, f = 1.0 kHz, PBW = 150 Hz)
(IC = 250 mA, VCE = 5.0 V, RS = 1.0 kW, f = 1.0 kHz, PBW = 150 Hz)
1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%.
Symbol
V(BR)CES
V(BR)CEO(sus)
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
Cobo
Cibo
hfe
NF
Min
40
40
40
5.0
250
250
250
2.0
Max
10
3.0
20
Unit
Vdc
Vdc
Vdc
Vdc
nA
mA
nA
0.25
0.9
Vdc
Vdc
6.0 pF
16 pF
800
dB
2.0
2.0
http://onsemi.com
2


Part Number MPS4250
Description PNP Transistor
Maker ON Semiconductor
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MPS4250 Datasheet PDF





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