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  ON Semiconductor Electronic Components Datasheet  

MPS5179 Datasheet

High Frequency Transistor NPN Silicon

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MPS5179 pdf
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MPS5179
Preferred Device
High Frequency Transistor
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol
VCEO
VCBO
VEBO
IC
PD
Value
12
20
2.5
50
200
1.14
Unit
Vdc
Vdc
Vdc
mAdc
W
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 300 W
1.71 mW/°C
Storage Temperature Range
Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
MARKING
DIAGRAM
MPS
5179
TO−92
CASE 29−11
AYWW G
G
1
2
STYLE 1
3
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1
MPS5179 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MPS5179
MPS5179G
Package
TO−92
TO−92
(Pb−Free)
Shipping
5000 Units/Box
5000 Units/Box
MPS5179RLRA TO−92 2000/Tape & Reel
MPS5179RLRAG TO−92 2000/Tape & Reel
(Pb−Free)
MPS5179RLRP TO−92 2000/Tape & Ammo
MPS5179RLRPG TO−92 2000/Tape & Ammo
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MPS5179/D


  ON Semiconductor Electronic Components Datasheet  

MPS5179 Datasheet

High Frequency Transistor NPN Silicon

No Preview Available !

MPS5179 pdf
MPS5179
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Sustaining Voltage
(IC = 3.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = 0.001 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 0.01 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 3.0 mAdc, VCE = 1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 1)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz)
Small Signal Current Gain
(IC = 2.0 mAdc, VCE = 6.0 Vdc, f = 1.0 kHz)
1. fT is defined as the frequency at which |hfe| extrapolates to unity.
Symbol
Min Max
Unit
VCEO(sus)
12
Vdc
V(BR)CBO
20
Vdc
V(BR)EBO
2.5
Vdc
ICBO
mAdc
− 0.02
− 1.0
hFE
VCE(sat)
VBE(sat)
25 250
− 0.4 Vdc
− 1.0 Vdc
fT
900 2000
MHz
Ccb − 1.0 pF
hfe
25 300
http://onsemi.com
2


Part Number MPS5179
Description High Frequency Transistor NPN Silicon
Maker ON Semiconductor
Total Page 3 Pages
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