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  ON Semiconductor Electronic Components Datasheet  

MPS6601 Datasheet

(MPS6601 / MPS6602) Amplifier Transistors

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MPS6601 pdf
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MPS6601, MPS6602 (NPN)
MPS6651, MPS6652 (PNP)
MPS6602 and MPS6652 are Preferred Devices
Amplifier Transistors
Features
Voltage and Current are Negative for PNP Transistors
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
MPS6601/6651
MPS6602/6652
VCEO
Value
25
40
Unit
Vdc
Collector −Base Voltage
VCBO
Vdc
MPS6601/6651
25
MPS6602/6652
30
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
4.0
1000
625
5.0
Vdc
mAdc
W
mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 W
Derate above 25°C
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
(Note 1)
Symbol
RqJA
Max
200
Unit
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. RqJA is measured with the device soldered into a typical printed circuit board.
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COLLECTOR
3
COLLECTOR
3
2
BASE
NPN
1
EMITTER
2
BASE
PNP
1
EMITTER
TO−92
CASE 29−11
1
2
STYLE 1
3
MARKING DIAGRAM
MPS
66xy
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 4
1
MPS66xy = Device Code
x = 0 or 5
y = 1 or 2
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MPS6601/D


  ON Semiconductor Electronic Components Datasheet  

MPS6601 Datasheet

(MPS6601 / MPS6602) Amplifier Transistors

No Preview Available !

MPS6601 pdf
MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Max
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
MPS6601/6651
MPS6602/6652
V(BR)CEO
25
40
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MPS6601/6651
MPS6602/6652
V(BR)CBO
25
40
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)EBO
MPS6601/6651
MPS6602/6652
MPS6601/6651
MPS6602/6652
ICES
ICBO
4.0
0.1
0.1
0.1
0.1
DC Current Gain
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1000 mAdc, VCE = 1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 1000 mAdc, IB = 100 mAdc)
Base−Emitter On Voltage
(IC = 500 mAdc, VCE = 1.0 Vdc)
hFE
50 −
50 −
30 −
VCE(sat) − 0.6
VBE(on)
− 1.2
SMALL− SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT 100 −
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
− 30
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 40 Vdc, IC = 500 mAdc,
IB1 = 50 mAdc,
tp w 300 ns Duty Cycle)
td
tr
ts
tf
− 25
− 30
− 250
− 50
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Vdc
Vdc
MHz
pF
ns
ns
ns
ns
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2


Part Number MPS6601
Description (MPS6601 / MPS6602) Amplifier Transistors
Maker ON Semiconductor
Total Page 8 Pages
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MPS6601 pdf
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