Full PDF Text Transcription for MPS6726 (Reference)
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MPS6726. For precise diagrams, and layout, please refer to the original PDF.
MPS6726 One Watt Amplifier Transistors PNP Silicon Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Bas...
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NGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD −30 −40 −5.0 −1.0 1.0 8.0 Vdc Vdc Vdc Adc W mW/°C Total Device Dissipation @ TC = 25°C PD 2.5 W Derate above 25°C 20 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W Thermal Resistance, Junction−to−Case RqJC 50 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum
MPS6726 Datasheet
