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  ON Semiconductor Electronic Components Datasheet  

MPSW05 Datasheet

One Watt Amplifier Transistors

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MPSW05, MPSW06
One Watt Amplifier
Transistors
NPN Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector Emitter Voltage
MPSW05 VCEO
60
Vdc
MPSW06
80
Collector Base Voltage
MPSW05 VCBO
MPSW06
60
80
Vdc
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
4.0 Vdc
500 mAdc
1.0 W
8.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 2.5 W
Derate above 25°C
20 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient RqJA
125 °C/W
Thermal Resistance, JunctiontoCase
RqJC
50 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
August, 2010 Rev. 4
1
http://onsemi.com
2
BASE
COLLECTOR
3
1
EMITTER
123
12 3
TO92 1 WATT
(TO226)
CASE 2910
STYLE 1
STRAIGHT LEAD
BENT LEAD
BULK PACK
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MPS
W0x
AYWW G
G
x = 5 or 6
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MPSW05G
TO92
5000 Units/Bulk
(PbFree)
MPSW06G
TO92
5000 Units/Bulk
(PbFree)
MPSW06RLRA
TO92 2000/Tape & Reel
MPSW06RLRAG TO92 2000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MPSW05/D


  ON Semiconductor Electronic Components Datasheet  

MPSW05 Datasheet

One Watt Amplifier Transistors

No Preview Available !

MPSW05, MPSW06
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Vdc
MPSW05
60
MPSW06
80
Emitter Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
V(BR)EBO
4.0
Vdc
MPSW05
MPSW06
MPSW05
MPSW06
ICES
ICBO
IEBO
mAdc
0.5
0.5
mAdc
0.1
0.1
mAdc
0.1
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 250 mAdc, VCE = 1.0 Vdc)
Collector Emitter Saturation Voltage
(IC = 250 mAdc, IB = 10 mAdc)
BaseEmitter Saturation Voltage
(IC = 250 mAdc, VCE = 5.0 Vdc)
SMALLSIGNAL CHARACTERISTICS
hFE
80
60
VCE(sat)
Vdc
0.4
VBE(sat)
Vdc
1.2
Current Gain Bandwidth Product
(IC = 200 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
fT
Cobo
MHz
50
pF
12
400
TJ = 125°C
200
25°C
-55°C
100
80
60
VCE = 1.0 V
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
200 300 500
http://onsemi.com
2


Part Number MPSW05
Description One Watt Amplifier Transistors
Maker ON Semiconductor
Total Page 4 Pages
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