Full PDF Text Transcription for MPSW42 (Reference)
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MPSW42. For precise diagrams, and layout, please refer to the original PDF.
MPSW42 One Watt High Voltage Transistor NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collect...
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UM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation Derate above 25°C @ TA = 25°C VCEO VCBO VEBO IC PD 300 Vdc 300 Vdc 6.0 Vdc 500 mAdc 1.0 W 8.0 mW/°C Total Device Dissipation @ TC = 25°C PD 2.5 W Derate above 25°C 20 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W Thermal Resistance, Junction−to−Case RqJC 50 °C/W Stresses exceeding Maximum Ratings may damage the device.
MPSW42 Datasheet
