MS3003 - P-Channel Power MOSFET

onsemi

Key Features

ON-resistance RDS(on)1=5.0mΩ (typ. ).
Input capacitance Ciss=13200pF (typ. ).
-4V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV Note :.
1 VDD=--36V, L=100μH, IAV=--60A (Fig.

MS3003 p-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	MS3003
Manufacturer	onsemi
File Size	263.02 KB
Description	P-Channel Power MOSFET
Datasheet	MS3003 Datasheet

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Ordering number : ENA1907B BMS3003 P-Channel Power MOSFET –60V, –78A, 6.5mΩ, TO-220F-3SG http://onsemi.com Features • ON-resistance RDS(on)1=5.0mΩ (typ.) • Input capacitance Ciss=13200pF (typ.) • -4V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--36V, L=100μH, IAV=--60A (Fig.1) *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings Unit --60 V ±20 V --78 A --312 A 2.