Datasheet4U Logo Datasheet4U.com

MSD1819A-RT1 - General Purpose Amplifier Transistor

Key Features

  • High hFE, 210 -- 460.
  • Low VCE(sat), < 0.5 V.
  • Moisture Sensitivity Level 1.
  • ESD Protection: Human Body Model > 4000 V Machine Model > 400 V.
  • These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number MSD1819A-RT1
Manufacturer onsemi
File Size 205.09 KB
Description General Purpose Amplifier Transistor
Datasheet download datasheet MSD1819A-RT1 Datasheet

Full PDF Text Transcription for MSD1819A-RT1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MSD1819A-RT1. For precise diagrams, and layout, please refer to the original PDF.

MSD1819A- RT1 General Purpose Amplifier Transistor NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applic...

View more extracted text
ial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features  High hFE, 210 -- 460  Low VCE(sat), < 0.5 V  Moisture Sensitivity Level 1  ESD Protection: Human Body Model > 4000 V Machine Model > 400 V  These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.