Datasheet4U Logo Datasheet4U.com

MTB30P06V - Power MOSFET

Features

  • Avalanche Energy Specified.
  • IDSS and VDS(on) Specified at Elevated Temperature.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • MTBV30P06V.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Datasheet preview – MTB30P06V

Datasheet Details

Part number MTB30P06V
Manufacturer ON Semiconductor
File Size 159.52 KB
Description Power MOSFET
Datasheet download datasheet MTB30P06V Datasheet
Additional preview pages of the MTB30P06V datasheet.

📁 Similar Datasheet

  • MTB30P06V - TMOS POWER FET (Motorola)
  • MTB30N06EL - TMOS Power FET (Motorola Semiconductor)
  • MTB30N06ELT4 - TMOS Power FET (Motorola Semiconductor)
  • MTB30N06VL - TMOS POWER FET (Motorola)
  • MTB33N10E - TMOS POWER FET (Motorola)
  • MTB35N04J3 - N -Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTB35N04J3 - N -Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTB36N06E - TMOS POWER FET (Motorola)
  • MTB36N06V - TMOS POWER FET (Motorola)
  • MTB3D0N03BH8 - N-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
MTB30P06V, MTBV30P06V Power MOSFET 30 Amps, 60 Volts P−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Published: |