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  ON Semiconductor Electronic Components Datasheet  

MTB30P06V Datasheet

Power MOSFET

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MTB30P06V, MTBV30P06V
Power MOSFET
30 Amps, 60 Volts
PChannel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Features
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
AECQ101 Qualified and PPAP Capable MTBV30P06V
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DraintoSource Voltage
DraintoGate Voltage (RGS = 1.0 MW)
GatetoSource Voltage
Continuous
Nonrepetitive (tp 10 ms)
Drain Current Continuous @ 25°C
Continuous @ 100°C
Single Pulse (tp 10 ms)
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C
(Note 1)
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60 Vdc
60 Vdc
± 15 Vdc
± 25 Vpk
30 Adc
19
105 Apk
125 W
0.83 W/°C
3.0
Operating and Storage Temperature Range TJ, Tstg 55 to
175
°C
Single Pulse DraintoSource Avalanche EAS 450 mJ
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 30 Apk, L = 1.0 mH, RG = 25 W)
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
JunctiontoAmbient (Note 1)
RRRqqqJJJCAA
°C/W
1.2
62.5
50
Maximum Lead Temperature for Soldering
Purposes, 1/8from Case for 10 seconds
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
http://onsemi.com
30 AMPERES, 60 VOLTS
RDS(on) = 80 mW
PChannel
D
G
S
D2PAK
CASE 418B
1 STYLE 2
MARKING DIAGRAM & PIN ASSIGNMENT
4 Drain
MTB
30P06VG
AYWW
1
Gate
2
Drain
3
Source
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
MTB30P06VG
MTB30P06VT4G
D2PAK
(PbFree)
D2PAK
(PbFree)
50 Units / Rail
800 / Tape & Reel
MTBV30P06VT4G D2PAK 800 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 5
1
Publication Order Number:
MTB30P06V/D


  ON Semiconductor Electronic Components Datasheet  

MTB30P06V Datasheet

Power MOSFET

No Preview Available !

MTB30P06V, MTBV30P06V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
GateBody Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 15 Adc)
DrainSource OnVoltage
(VGS = 10 Vdc, ID = 30 Adc)
(VGS = 10 Vdc, ID = 15 Adc, TJ = 150°C)
Forward Transconductance
(VDS = 8.3 Vdc, ID = 15 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 30 Vdc, ID = 30 Adc,
VGS = 10 Vdc, RG = 9.1 W)
Fall Time
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 30 Adc,
VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 30 Adc, VGS = 0 Vdc)
(IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperature.
Symbol
Min Typ Max Unit
V(BR)DSS
60
62
Vdc
mV/°C
IDSS
mAdc
− − 10
− − 100
IGSS
− − 100 nAdc
VGS(th)
RDS(on)
VDS(on)
gFS
2.0 2.6 4.0 Vdc
5.3 mV/°C
0.067 0.08
W
Vdc
2.0 2.9
− − 2.8
5.0 7.9
Mhos
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
LD
LS
1562 2190 pF
524 730
154 310
14.7 30
25.9 50
98 200
52.4 100
54 80
9.0
26
20
ns
nC
2.3 3.0
1.9
175
107
68
0.965
Vdc
ns
mC
3.5
4.5
7.5
nH
nH
http://onsemi.com
2


Part Number MTB30P06V
Description Power MOSFET
Maker ON Semiconductor
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MTB30P06V Datasheet PDF






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