MTB36N06V
MTB36N06V is Power MOSFET manufactured by onsemi.
Preferred Device
Power MOSFET 32 Amps, 60 Volts
N- Channel D2PAK
This Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain- to- Source Voltage
Drain- to- Gate Voltage (RGS = 1.0 MΩ)
Gate- to- Source Voltage
- Continuous
- Non- Repetitive (tp ≤ 50 μs)
Drain Current
- Continuous @ 25°C Drain Current
- Continuous @ 100°C Drain Current
- Single Pulse (tp ≤ 10 μs)
Total Power Dissipation @ 25°C Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1.)
VDSS VDGR
VGS VGSM
ID ID IDM PD
60 Vdc 60 Vdc
± 20 ± 25
32 22.6 112
90 0.6 3.0
Vdc Vpk Adc
Apk Watts W/°C Watts
Operating and Storage Temperature...
