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  ON Semiconductor Electronic Components Datasheet  

MTB50P03HDL Datasheet

P-Channel Power MOSFET

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MTB50P03HDL,
MVB50P03HDLT4G
P-Channel Power MOSFET
50 A, 30 V, Logic Level D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a draintosource diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Features
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
MVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DrainSource Voltage
DrainGate Voltage (RGS = 1.0 MW)
GateSource Voltage
Continuous
NonRepetitive (tp 10 ms)
Drain Current Continuous
Drain Current Continuous @ 100°C
Drain Current Single Pulse (tp 10 ms)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TC = 25°C, when
mounted with min. recommended pad size
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
30 Vdc
30 Vdc
±15 Vdc
± 20 Vpk
50 Adc
31
150 Apk
125 W
1.0 W/°C
2.5 W
Operating and Storage Temperature Range
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, Peak
IL = 50 Apk, L = 1.0 mH, RG = 25 W)
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
JunctiontoAmbient, when mounted with
the minimum recommended pad size
TJ, Tstg
EAS
RRRqqqJJJCAA
55 to 150
1250
1.0
62.5
50
°C
mJ
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
50 AMPERES
30 VOLTS
RDS(on) = 25 mW
PChannel
D
G
S
12
3
4
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
M TB
50P03HG
AYWW
1
Gate
2
Drain
3
Source
MTB50P03H = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
January, 2014 Rev. 7
1
Publication Order Number:
MTB50P03HDL/D


  ON Semiconductor Electronic Components Datasheet  

MTB50P03HDL Datasheet

P-Channel Power MOSFET

No Preview Available !

MTB50P03HDL, MVB50P03HDLT4G
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
(Cpk 2.0) (Note 3)
V(BR)DSS
30
26
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current
(VGS = ±15 Vdc, VDS = 0 Vdc)
IDSS
mAdc
− − 1.0
− − 10
IGSS
nAdc
100
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk 3.0) (Note 3)
VGS(th)
Vdc
1.0 1.5 2.0
4.0 mV/°C
Static DrainSource OnResistance
(VGS = 5.0 Vdc, ID = 25 Adc)
DrainSource OnVoltage (VGS = 5.0 Vdc)
(ID = 50 Adc)
(ID = 25 Adc, TJ =125°C)
Forward Transconductance
(VDS = 5.0 Vdc, ID = 25 Adc)
(Cpk 3.0) (Note 3)
RDS(on)
20.9 25
mW
VDS(on)
Vdc
0.83 1.5
− − 1.3
gFS mhos
15 20
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD= 15 Vdc, ID = 50 Adc,
VGS = 5.0 Vdc, RG = 2.3 W)
Fall Time
Gate Charge (See Figure 8)
(VDS =V2G4SV=d5c.,0IDV=dc5)0 Adc,
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
3500 4900
pF
1550 2170
550 770
22 30 ns
340 466
90 117
218 300
74 100 nC
13.6
44.8
35
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 5(0ISA=dc5,0VAGdSc=, V0GVSd=c,0TVJ d=c1) 25°C)
VSD
Vdc
2.39 3.0
1.84
Reverse Recovery Time
(See Figure 15)
Reverse Recovery Stored Charge
(IS = 50 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
ta
tb
QRR
106
58
48
0.246
ns
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25from package to center of die)
LD 3.5 nH
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values. Cpk =
Max limit Typ
3 x SIGMA
LS 7.5 nH
http://onsemi.com
2


Part Number MTB50P03HDL
Description P-Channel Power MOSFET
Maker ON Semiconductor
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