MTB50P03HDL Datasheet | onsemi

MTB50P03HDL, MVB50P03HDLT4G P-Channel Power MOSFET 50 A, 30 V, Logic Level D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. The energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Features - Avalanche Energy Specified - Source- to- Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode - Diode is Characterized for Use in Bridge Circuits - IDSS and VDS(on) Specified at Elevated Temperature - Short Heatsink Tab Manufactured - Not Sheared - Specially Designed Leadframe for Maximum Power Dissipation - MVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free and are Ro HS pliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain- Source Voltage Drain- Gate Voltage (RGS = 1.0 MW) Gate- Source Voltage - Continuous - Non- Repetitive (tp ≤ 10 ms) Drain Current - Continuous Drain Current - Continuous @ 100°C Drain Current - Single Pulse (tp ≤ 10 ms) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TC = 25°C, when mounted with min. remended pad size VDSS VDGR VGS VGSM ID ID IDM PD 30 Vdc 30 Vdc ±15 Vdc ± 20 Vpk 50 Adc 31 150 Apk 125 W 1.0 W/°C 2.5...