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  ON Semiconductor Electronic Components Datasheet  

MTB75N06HD Datasheet

Power MOSFET

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MTB75N06HD
Preferred Device
Power MOSFET
75 Amps, 60 Volts
N−Channel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured − Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 M)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp 10 ms)
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (tp 10 µs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TC = 25°C
(Note 1.)
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60 Vdc
60 Vdc
± 20 Vdc
± 30 Vpk
75 Adc
50
225 Apk
125 Watts
1.0 W/°C
2.5 Watts
Operating and Storage Temperature
Range
− 55 to 150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL = 75 Apk, L = 0.177 mH, RG = 25 )
Thermal Resistance
− Junction to Case
− Junction to Ambient
− Junction to Ambient (Note 1.)
EAS
RθJC
RθJA
RθJA
500 mJ
1.0 °C/W
62.5
50
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10
seconds
TL
260 °C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
http://onsemi.com
75 AMPERES
60 VOLTS
RDS(on) = 10 m
N−Channel
D
G
S
12
3
4
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
T75N06HD
YWW
12
Gate Drain
3
Source
T75N06HD = Device Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTB75N06HD
MTB75N06HDT4
D2PAK
D2PAK
50 Units/Rail
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
September, 2004 − Rev.xxx
1
Publication Order Number:
MTB75N06HD/D


  ON Semiconductor Electronic Components Datasheet  

MTB75N06HD Datasheet

Power MOSFET

No Preview Available !

MTB75N06HD
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
(Cpk 2.0) (Note 4.)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 V)
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
(Cpk 5.0) (Note 4.)
Static Drain−Source On−Resistance
(VGS = 10 Vdc, ID = 37.5 Adc)
(Cpk 2.0) (Note 4.)
Drain−Source On−Voltage (VGS = 10 Vdc)
(ID = 75 Adc)
(ID = 37.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 37.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDS = 30 Vdc, ID = 75 Adc,
VGS = 10 Vdc,
RG = 9.1 )
Gate Charge
(VDS = 48 Vdc, ID = 75 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 75 Adc, VGS = 0 Vdc)
(IS = 75 Adc, VGS = 0 Vdc, TJ = 125°C)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Reverse Recovery Time
(IS = 75 Adc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values.
Max limit − Typ
Cpk =
3 x SIGMA
trr
ta
tb
QRR
LD
LS
Min
60
2.0
15
Typ Max Unit
Vdc
68 −
60.4 − mV/°C
µAdc
− 10
− 100
5.0 100 nAdc
Vdc
3.0 4.0
8.38 − mV/°C
m
8.3 10
Vdc
0.7 0.9
0.53 0.8
32 − mhos
2800
928
180
3920
1300
252
pF
18 26
218 306
67 94
125 175
71 100
16.3 −
31 −
29.4 −
ns
nC
0.97
0.88
56
44
12
0.103
1.1
Vdc
ns
µC
nH
3.5 −
7.5 − nH
http://onsemi.com
2


Part Number MTB75N06HD
Description Power MOSFET
Maker ON Semiconductor
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MTB75N06HD Datasheet PDF






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