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MTD20N03HDL - Power MOSFET

Key Features

  • Avalanche Energy Specified.
  • Source.
  • to.
  • Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
  • Diode is Characterized for Use in Bridge Circuits.
  • IDSS and VDS(on) Specified at Elevated Temperature.
  • Pb.
  • Free Packages are Available.

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Full PDF Text Transcription for MTD20N03HDL (Reference)

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MTD20N03HDL Preferred Device Power MOSFET 20 Amps, 30 Volts, Logic Level N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche a...

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d Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.