Download MTD5P06V Datasheet PDF
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MTD5P06V Key Features

  • Avalanche Energy Specified
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Pb-Free Packages are Available
  • Continuous
  • Non-repetitive (tp ≤ 10 ms)
  • Continuous @ 25°C
  • Continuous @ 100°C
  • Single Pulse (tp ≤ 10 ms)
  • 55 to 175
  • Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 5 Apk, L = 10 mH, RG = 25 W)

Other MTD5P06V Datasheets

Manufacturer Part Number Description
Motorola Logo Motorola Semiconductor MTD5P06V TMOS POWER FET
Motorola Logo Motorola Semiconductor MTD5P06E TMOS POWER FET

View all MTD5P06V datasheets →

MTD5P06V Description

MTD5P06V Preferred Device Power MOSFET 5 A, 60 V, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer...