Datasheet Summary
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Preferred Device
Power MOSFET 6 Amps, 200 Volts
N- Channel DPAK
This advanced Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Features http://onsemi.
6 AMPERES, 200 VOLTS RDS(on) = 460 mW
N- Channel D
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