* 1.9 V 2.3 V 2.1 V 2.0 1.7 V 1.0 1.5 V 0 0 0.4 0.8 1.2 1.6 2.0 VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 1. On
* Region Characteristics ID, DRAIN CURRENT (AMPS) 4.0 VGS = 8 4.5 V 3.0 3.7 V 3.3 V 2.0 P
* Channel 3.1 V 2.9 V 2.7 V TJ = 25°C 2.5 V 2.3 V 1.0 2.1 V
MTDF1C02HD Datasheet (331.05 KB)
MTDF1C02HD
331.05 KB
Power mosfet.
MTDF1C02HD Preferred Device Power MOSFET 1 Amp, 20 Volts Complementary Micro8t These Power MOSFET devices are capable of withstanding high energy in t.
📁 Related Datasheet
MTDF1N03HD Power MOSFET (ON Semiconductor)
MTDF2N06HD Power MOSFET (ON Semiconductor)
MTD-0208N Tunnel Diode Detectors (Aeroflex)
MTD-0218N Tunnel Diode Detectors (Aeroflex)
MTD-0818N Tunnel Diode Detectors (Aeroflex)
MTD-1002N Tunnel Diode Detectors (Aeroflex)
MTD-160 PHASE CONTROL THYRISTOR (ELECTROVIPRYAMITEL)
MTD010P03V8 P-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTD011N10RH8 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTD011N10RJ3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
