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MTDF1N03HD - Power MOSFET

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  • mined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 11) shows how typical switching performance is affec.

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Datasheet Details

Part number MTDF1N03HD
Manufacturer onsemi
File Size 297.49 KB
Description Power MOSFET
Datasheet download datasheet MTDF1N03HD Datasheet
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MTDF1N03HD Preferred Device Power MOSFET 1 Amp, 30 Volts N−Channel Micro8t, Dual These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. Micro8 devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.
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