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MTP40N10E - Power MOSFET

Key Features

  • 2000 1000 0.
  • 10 Crss.
  • 5 0 5 VGS VDS Coss 10 15 20 25 GATE.
  • TO.
  • SOURCE OR DRAIN.
  • TO.
  • SOURCE.

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Full PDF Text Transcription for MTP40N10E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MTP40N10E. For precise diagrams, and layout, please refer to the original PDF.

MTP40N10E Preferred Device Power MOSFET 40 Amps, 100 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes....

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igned to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.