Datasheet4U.com

MTW32N20E - Power MOSFET

Product Overview

ON Semiconductor

📥 Download Datasheet

MTW32N20E Power MOSFET by ON Semiconductor - Datasheet Preview — Datasheet preview – MTW32N20E

Datasheet Details

Part number	MTW32N20E
Manufacturer	ON Semiconductor
File Size	127.52 KB
Description	Power MOSFET
Datasheet	MTW32N20E-ONSemiconductor.pdf
Additional preview pages of the MTW32N20E datasheet.

Product details

Features

Avalanche Energy Specified.
Source.
to.
Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
Diode is Characterized for Use in Bridge Circuits.
IDSS and VDS(on) Specified at Elevated Temperature.
Isolated Mounting Hole.
This is a Pb.
Free Device.

📁 Similar Datasheet

MTW32N25E - TMOS POWER FET (Motorola)
MTW33N10E - TMOS POWER FET (Motorola)
MTW10N100E - TMOS POWER FET (Motorola)
MTW10N40E - TMOS E-FET POWER FIELD EFFECT TRANSISTOR (Motorola)
MTW14N50E - TMOS POWER FET (Motorola)
MTW16N40E - TMOS POWER FET (Motorola)
MTW23N25E - TMOS POWER FET 23 AMPERES 250 VOLTS (Motorola)
MTW24N40E - TMOS POWER FET 24 AMPERES 400 VOLTS (Motorola)

Other Datasheets by ON Semiconductor

MTW35N15E - Power MOSFET
MTW20N50E - Power MOSFET
MTW45N10E - Power MOSFET AMPERES 100 VOLTS RDS(on) = 0.035 OHM
MTW6N100E - Power MOSFET
MTW7N80E - Power MOSFET 7 Amp
MTW8N60E - TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

Published: Jan 28, 2016 |