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  ON Semiconductor Electronic Components Datasheet  

MUR2020R Datasheet

ULTRAFAST RECTIFIER 20 AMPERES

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MUR2020R pdf
MUR2020R
SWITCHMODEt
Ultrafast Power Rectifier
Features and Benefits
Reverse Polarity Rectifier
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
www.DataSheet4U.2co0mA Total (10 A Per Diode Leg)
Pb−Free Packages are Available*
Applications
Power Supply – Output Rectification
Power Management
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets UL 94, V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperatures for Soldering Purposes: 260°C Max. for 10 Seconds
ESD Rating: Human Body Model 3B
Machine Model C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
ULTRAFAST RECTIFIER
20 AMPERES, 200 VOLTS
trr = 95 ns
1
4
3
4
TO−220AC
CASE 221B
1 STYLE 2
3
MARKING DIAGRAM
AY WWG
U2020R
AK
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
AK = Diode Polarity
ORDERING INFORMATION
Device
Package
Shipping
MUR2020R
TO−220AC
50 Units/Rail
MUR2020RG
TO−220AC
(Pb−Free)
50 Units/Rail
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 4
1
Publication Order Number:
MUR2020R/D


  ON Semiconductor Electronic Components Datasheet  

MUR2020R Datasheet

ULTRAFAST RECTIFIER 20 AMPERES

No Preview Available !

MUR2020R pdf
MUR2020R
MAXIMUM RATINGS (Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Voltage,
(Rated VR), TC = 125°C
VRRM
VRWM
VR
IF(AV)
200
20
V
A
Peak Repetitive Forward Current
(Rated VR), TC = 125°C
IFRM 40 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM 250 A
Operating Junction Temperature and Storage Temperature Range
TJ, Tstg
−65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
www.DataSheet4dUe.vcicoemreliability.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Conditions
Min. Pad
Min. Pad
Symbol
RqJC
RqJA
Max
2.0
70
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 1)
(iF = 20 Amps, Tj = 25°C)
(iF = 20 Amps, Tj = 150°C)
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, Tj = 25°C)
(Rated dc Voltage, Tj = 150°C)
Maximum Reverse Recovery Time
(IF = 1.0 Amps, di/dt = 50 A/ms)
(IF = 1.0 Amps, di/dt = 100 A/ms)
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
Symbol
vF
iR
trr
Min
Typical
0.97
0.79
0.1
0.225
Max
1.1
1.0
50
1.0
95
75
Unit
V
mA
mA
ns
40
dc
30
20
TJ = 175°C
15 Square Wave
TJ = 175°C
20
Square Wave
10
dc
10 5
00
0 50 100 150 200 0 5 10 15 20 25
TC, CASE TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 1. Current Derating
Figure 2. Power Dissipation
http://onsemi.com
2


Part Number MUR2020R
Description ULTRAFAST RECTIFIER 20 AMPERES
Maker ON Semiconductor
Total Page 4 Pages
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