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  ON Semiconductor Electronic Components Datasheet  

MURD330T4G Datasheet

Power Rectifier

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MURD330T4G,
SURD8330T4G
SWITCHMODE
Power Rectifier
DPAK Surface Mount Package
These stateoftheart devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
Low Forward Voltage Drop
Low Leakage
UltraFast Recovery Time
AECQ101 Qualified and PPAP Capable
SURD8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
PbFree Package*
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 0.4 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Rated Reverse Voltage
Average Rectified Forward Current
(Rated VR, TC = 170°C)
NonRepetitive Peak Surge Current
Operating Junction and Storage
Temperature Range
VR
IF
IFSM
TJ, Tstg
300
3.0
75
55 to +175
V
A
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
ULTRAFAST RECTIFIER
3 A, 300 V
DPAK
CASE 369C
1
4
3
MARKING DIAGRAM
1 AYWW
U330G
U330
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
MURD330T4G
DPAK
2,500/Tape & Reel
(PbFree)
SURD8330T4G
DPAK
2,500/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 5
1
Publication Order Number:
MURD330/D


  ON Semiconductor Electronic Components Datasheet  

MURD330T4G Datasheet

Power Rectifier

No Preview Available !

MURD330T4G, SURD8330T4G
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance JunctiontoCase
Thermal Resistance JunctiontoAmbient (Note 1)
1. Rating applies when surface mounted on a 700 mm2, 1 oz Cu heat spreader.
ELECTRICAL CHARACTERISTICS
Characteristics
Maximum Instantaneous Forward Voltage Drop
(IF = 3 A, TJ = 25°C)
(iF = 3 A, TJ = 150°C)
Maximum Instantaneous Reverse Current
(TJ = 25°C, 300 V)
(TJ = 150°C, 300 V)
Maximum Reverse Recovery Time
(IF = 1 A, di/dt = 50 A/ms, VR = 30 V, TJ = 25°C)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
Typical Peak Reverse Recovery Current
(IF = 1.0 A, di/dt = 50 A/ms)
Symbol
RqJC
RqJA
Symbol
VF
IR
trr
IRM
Value
2
49
Value
1.15
0.92
5
500
50
> 400
> 8000
1.5
Unit
°C/W
°C/W
Unit
V
mA
ns
V
A
100.0
TYPICAL CHARACTERISTICS
100.0
10.0
175°C
1.0
150°C
25°C
10.0
175°C
150°C
25°C
1.0
0.10.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
VF, INSTANTANEOUS VOLTAGE (V)
Figure 1. Typical Forward Voltage
0.10.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
VF, INSTANTANEOUS VOLTAGE (V)
Figure 2. Maximum Forward Voltage
http://onsemi.com
2


Part Number MURD330T4G
Description Power Rectifier
Maker ON Semiconductor
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