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  ON Semiconductor Electronic Components Datasheet  

MV2101 Datasheet

(MV2101 - MV2209) Silicon Tuning Diodes

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MMBV2101LT1 Series,
MV2105, MV2101, MV2109,
LV2209
Preferred Device
Silicon Tuning Diodes
These devices are designed in popular plastic packages for the high
volume requirements of FM Radio and TV tuning and AFC, general
frequency control and tuning applications. They provide solid−state
reliability in replacement of mechanical tuning methods. Also
available in a Surface Mount Package up to 33 pF.
Features
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance − 10%
Complete Typical Design Curves
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Reverse Voltage
Forward Current
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
MMBV21xx
VR
IF
PD
Value
30
200
225
1.8
Unit
Vdc
mAdc
mW
mW/°C
@ TA = 25°C
Derate above 25°C
MV21xx
LV2209
280 mW
2.8 mW/°C
Junction Temperature
TJ +150 °C
Storage Temperature Range
Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
V(BR)R
Vdc
(IR = 10 mAdc)
MMBV21xx, MV21xx
30 − −
LV2209
25 − −
Reverse Voltage Leakage Current IR − − 0.1 mAdc
(VR = 25 Vdc, TA = 25°C)
Diode Capacitance Temperature Co- TCC
efficient (VR = 4.0 Vdc, f = 1.0 MHz)
− 280 − ppm/°C
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
1
http://onsemi.com
6.8−100 pF, 30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
31
Cathode
Anode
SOT−23
21
Cathode
Anode
TO−92
MARKING
3 DIAGRAMS
1
2
SOT−23 (TO−236)
CASE 318−08
xxx M G
G
STYLE 8
1
xxx = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
TO−92 (TO−226AC)
1
2
CASE 182
STYLE 1
yy
yyyy
AYWW G
G
yyyyyy = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MMBV2101LT1/D


  ON Semiconductor Electronic Components Datasheet  

MV2101 Datasheet

(MV2101 - MV2209) Silicon Tuning Diodes

No Preview Available !

MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit TR, Tuning Ratio
VR = 4.0 Vdc,
f = 50 MHz
C2/C30
f = 1.0 MHz
Device
Marking Package
Shipping
Min Nom Max
Typ Min Typ Max
MMBV2101LT1 M4G SOT−23 3,000 / Tape & Reel 6.1 6.8 7.5
450 2.5 2.7 3.2
MMBV2101LT1G M4G SOT−23 3,000 / Tape & Reel 6.1 6.8 7.5
(Pb−Free)
450 2.5 2.7 3.2
MMBV2101L
M4G SOT−23
Bulk (Note 1)
6.1 6.8 7.5
450 2.5 2.7 3.2
MV2101
MV2101 TO−92
1,000 per Box
6.1 6.8 7.5
450 2.5 2.7 3.2
MV2101G
MV2101 TO−92
(Pb−Free)
1,000 per Box
6.1 6.8 7.5
450 2.5 2.7 3.2
MMBV2103LT1
4H SOT−23 3,000 / Tape & Reel 9.0 10 11
400 2.5 2.9 3.2
MMBV2105LT1
4U SOT−23 3,000 / Tape & Reel 13.5 15 16.5
400 2.5 2.9 3.2
MMBV2105LT1G 4U SOT−23 3,000 / Tape & Reel 13.5 15 16.5
(Pb−Free)
400 2.5 2.9 3.2
MMBV2105L
4U SOT−23
Bulk (Note 1)
13.5 15 16.5
400 2.5 2.9 3.2
MV2105
MV2105 TO−92
1,000 per Box
13.5 15 16.5
400 2.5 2.9 3.2
MV2105G
MV2105 TO−92
(Pb−Free)
1,000 per Box
13.5 15 16.5
400 2.5 2.9 3.2
MMBV2107LT1
4W SOT−23 3,000 / Tape & Reel 19.8 22 24.2
350 2.5 2.9 3.2
MMBV2107LT1G 4W SOT−23 3,000 / Tape & Reel 19.8 22 24.2
(Pb−Free)
350 2.5 2.9 3.2
MMBV2107L
4W SOT−23
Bulk (Note 1)
19.8 22 24.2
350 2.5 2.9 3.2
MMBV2108LT1
4X SOT−23 3,000 / Tape & Reel 24.3 27 29.7
300 2.5 3.0 3.2
MMBV2108LT1G 4X SOT−23 3,000 / Tape & Reel 24.3 27 29.7
(Pb−Free)
300 2.5 3.0 3.2
LV2209
LV2209 TO−92
1,000 per Box
29.7 33 36.3
200 2.5 3.0 3.2
MMBV2109LT1
4J SOT−23 3,000 / Tape & Reel 29.7 33 36.3
200 2.5 3.0 3.2
MMBV2109LT1G 4J SOT−23 3,000 / Tape & Reel 29.7 33 36.3
(Pb−Free)
200 2.5 3.0 3.2
MMBV2109L
4J SOT−23
Bulk (Note 1)
29.7 33 36.3
200 2.5 3.0 3.2
MV2109
MV2109 TO−92
1,000 per Box
29.7 33 36.3
200 2.5 3.0 3.2
MV2109G
MV2109 TO−92
(Pb−Free)
1,000 per Box
29.7 33 36.3
200 2.5 3.0 3.2
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
1. MMBV2101LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the “T1”
suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
1. CT, DIODE CAPACITANCE
(CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance
bridge (Boonton Electronics Model 75A or equivalent).
2. TR, TUNING RATIO
TR is the ratio of CT measured at 2.0 Vdc divided by CT
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an admittance
bridge at the specified frequency and substituting in the
following equations:
Q
+
2pfC
G
(Boonton Electronics Model 33AS8 or equivalent). Use Lead
Length [ 1/16.
4. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0
MHz, TA = −65°C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA
= +85°C in the following equation, which defines TCC:
Ť ŤTCC +
CT() 85°C) – CT(–65°C)
85 ) 65
·
106
CT(25°C)
Accuracy limited by measurement of CT to ±0.1 pF.
http://onsemi.com
2


Part Number MV2101
Description (MV2101 - MV2209) Silicon Tuning Diodes
Maker ON Semiconductor
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MV2101 Datasheet PDF






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