N02L6181A Datasheet Ultra-Low Power Asynchronous CMOS SRAM

Manufacturer: onsemi

N02L6181A ultra-low power asynchronous cmos sram by onsemi - Datasheet Preview

Datasheet Details

Part number	N02L6181A
Manufacturer	onsemi
File Size	239.03 KB
Description	Ultra-Low Power Asynchronous CMOS SRAM
Download	N02L6181A Download (PDF)

Overview

N02L6181A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview The N02L6181A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits.

The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power.

The base design is the same as ON Semiconductor’s N02L63W3A, which is processed to operate at higher voltages.

Key Features

Single Wide Power Supply Range 1.65 to 2.2 Volts.
Very low standby current 0.5µA at 1.8V (Typical).
Very low operating current 1.4mA at 1.8V and 1µs (Typical).
Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical).
Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion.
Low voltage data retention Vcc = 1.2V.
Very fast output enable access time.

More Datasheets from onsemi

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