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N02L83W2A - Ultra-Low Power Asynchronous CMOS SRAM

Description

©2008 SCILLC.

All rights reserved.

July 2008 - Rev.

Features

  • Single Wide Power Supply Range 2.3 to 3.6 Volts.
  • Very low standby current 2.0µA at 3.0V (Typical).
  • Very low operating current 2.0mA at 3.0V and 1µs (Typical).
  • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical).
  • Simple memory control Dual Chip Enables (CE1 and CE2) Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.8V.
  • Very fast output enable access time 30ns OE access time.
  • Automa.

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Datasheet Details

Part number N02L83W2A
Manufacturer onsemi
File Size 197.46 KB
Description Ultra-Low Power Asynchronous CMOS SRAM
Datasheet download datasheet N02L83W2A Datasheet

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Full PDF Text Transcription

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N02L83W2A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 8 bit Overview The N02L83W2A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 262,144 words by 8 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N02L83W2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 256Kb x 8 SRAMs www.DataSheet4U.
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