Datasheet4U Logo Datasheet4U.com

N08L63W2A Datasheet - ON Semiconductor

8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit

N08L63W2A Features

* Single Wide Power Supply Range 2.3 to 3.6 Volts

* Very low standby current 4.0µA at 3.0V (Typical)

* Very low operating current 2.0mA at 3.0V and 1µs(Typical)

* Very low Page Mode operating current 1.0mA at 3.0V and 1µs (Typical)

* Simple memory control Dual

N08L63W2A General Description

6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC 2 OE UB I/O10 I/O11 I/O12 3 A0 A3 A5 A17 NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 Pin Name A0-A18 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enab.

N08L63W2A Datasheet (216.12 KB)

Preview of N08L63W2A PDF

Datasheet Details

Part number:

N08L63W2A

Manufacturer:

ON Semiconductor ↗

File Size:

216.12 KB

Description:

8mb ultra-low power asynchronous cmos sram 512k x 16bit.
N08L63W2A 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit Overview The N08L63W2A is an integrated memory device containing a 8 Mbit Static Ra.

📁 Related Datasheet

N08L6182A 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit (ON Semiconductor)

N08L083WC2C 8Mb Ultra-Low Power Asynchronous CMOS SRAM (NanoAmp Solutions)

N08L1618C2A 8Mb Ultra-Low Power Asynchronous CMOS SRAM (NanoAmp Solutions)

N08L163WC1C 8Mb Ultra-Low Power Asynchronous CMOS SRAM (NanoAmp Solutions)

N08L163WC2A 8Mb Ultra-Low Power Asynchronous CMOS SRAM (NanoAmp Solutions)

N08L163WC2C 8Mb Ultra-Low Power Asynchronous CMOS SRAM (NanoAmp Solutions)

N0800S NPN SILICON EPITAXIAL TRANSISTOR (Renesas)

N080ICE-GB0 LCD (INNOLUX)

N080ICE-GB1 LCD MODULE (INNOLUX)

N0882NC400 Phase Control Thyristor (WESTCODE)

TAGS

N08L63W2A 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 16bit ON Semiconductor

Image Gallery

N08L63W2A Datasheet Preview Page 2 N08L63W2A Datasheet Preview Page 3

N08L63W2A Distributor