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NCD57001F - High Current IGBT Gate Driver

Description

No.

11 RDY 12 Power

Output side negative power supply.

Features

  • include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn.
  • off at DESAT. NCD57001F accommodates both 5 V and 3.3 V signals on the input side and wide bias voltage range on the driver side including negative voltage capability. NCD57001F provides >5 kVrms (UL1577 rating) galvanic isolation and >1200 Viorm (working voltage) capabilities. NCD57001F is available in the wide.
  • body SOIC.
  • 16 package with g.

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Datasheet preview – NCD57001F

Datasheet Details

Part number NCD57001F
Manufacturer ON Semiconductor
File Size 221.71 KB
Description High Current IGBT Gate Driver
Datasheet download datasheet NCD57001F Datasheet
Additional preview pages of the NCD57001F datasheet.

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Full PDF Text Transcription

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Isolated High Current IGBT Gate Driver NCD57001F NCD57001F is a variant of NCD57001 with reduced Soft−Turn−Off time suited to drive large IGBTs or power modules. NCD57001F is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn−off at DESAT. NCD57001F accommodates both 5 V and 3.3 V signals on the input side and wide bias voltage range on the driver side including negative voltage capability. NCD57001F provides >5 kVrms (UL1577 rating) galvanic isolation and >1200 Viorm (working voltage) capabilities.
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