NCD57080B, NCD57080A Datasheet - ON Semiconductor

NCD57080B Isolated High Current IGBT Gate Driver

Pin Name No. I/O Description VDD1 1 Power Input side power supply. A good quality bypassing capacitor is required from this pin to GND1 and should be placed close to the pins for best results. The under voltage lockout (UVLO) circuit enables the device to operate at power on when a typical.

Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y (x = D or V, y = A, B or C) NCx57080y, NCx57081y are high current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A), negative power supply (version B) and separate high and low.

NCD57080B Features

* High Peak Output Current (+6.5 A/

* 6.5 A)

* Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn

* on (Version A)

* Short Propagation Delays with Accurate Matching

* IGBT/MOSFET Gate Clamping during Short Cir

NCD57080A-ONSemiconductor.pdf