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NCP81085 - Dual MOSFET Gate Driver

General Description

Pin No.

Side Source No Connect High Side Input Low Side Input Negative Supply Return Low Side

Key Features

  • Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration.
  • Floating Top Driver Accommodates Boost Voltage up to 180 V.
  • Switching Frequency up to 1 MHz.
  • 20 ns Propagation Delay Times.
  • 4 A Sink, 4 A Source Output Currents.
  • 8 ns Rise / 7 ns Fall Times with 1000 pF Load.
  • UVLO Protection.
  • Specified from.
  • 40°C to 140°C.
  • Offered in WDFN9 (MT) Package.
  • This Device is Pb.
  • Free, Halogen Fre.

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Datasheet Details

Part number NCP81085
Manufacturer onsemi
File Size 169.57 KB
Description Dual MOSFET Gate Driver
Datasheet download datasheet NCP81085 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Dual MOSFET Gate Driver, High Performance NCP81085 Introduction The NCP81085 is a high performance dual MOSFET gate driver optimized to drive the gates of both high and low side power MOSFETs in a synchronous buck converter. The NCP81085 uses an on−chip bootstrap diode to eliminate the external discrete diode. A high floating top driver design can accommodate HB voltage as high as 180 V. The low−side and high−side are independently controlled and match to 4 ns between the turn−on and turn−off of each other. Independent Under−Voltage lockout is provided for the high side and low side driver forcing the output low when the drive voltage is below a specific threshold.