• Part: NCV57090D
  • Description: IGBT/MOSFET Gate Driver
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 1.91 MB
Download NCV57090D Datasheet PDF
onsemi
NCV57090D
Features - High Peak Output Current (+6.5 A/- 6.5 A) - Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn- on (Version A/D/F) - Short Propagation Delays with Accurate Matching - IGBT/MOSFET Gate Clamping during Short Circuit - IGBT/MOSFET Gate Active Pull Down - Tight UVLO Thresholds for Bias Flexibility - Wide Bias Voltage Range including Negative VEE2 (Version B) - 3.3 V, 5 V, and 15 V Logic Input - 5 k Vrms Galvanic Isolation - High Transient Immunity - High Electromagnetic Immunity - NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q100 Qualified and PPAP Capable - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant Typical Applications - Motor Control - Uninterruptible Power Supplies (UPS) - Automotive Applications - Industrial Power Supplies - Solar Inverters DATA SHEET .onsemi. SOIC8 WB CASE 751EW MARKING DIAGRAM 8 5709zy AWLYYWW 5709zy A WL YY WW G =...