Datasheet4U Logo Datasheet4U.com

NCV57091A Datasheet IGBT/MOSFET Gate Driver

Manufacturer: onsemi

Download the NCV57091A datasheet PDF. This datasheet also includes the NCV57090A variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NCV57090A-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y (x = D or V, y = A, B, C, D, E or F) NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications.

The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A/D/F), negative power supply (version B) and separate high and low (OUTH and OUTL) driver outputs (version C/E) for system design convenience.

The driver accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in wide−body SOIC−8 package.

Key Features

  • High Peak Output Current (+6.5 A/.
  • 6.5 A).
  • Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn.
  • on (Version A/D/F).
  • Short Propagation Delays with Accurate Matching.
  • IGBT/MOSFET Gate Clamping during Short Circuit.
  • IGBT/MOSFET Gate Active Pull Down.
  • Tight UVLO Thresholds for Bias Flexibility.
  • Wide Bias Voltage Range including Negative VEE2 (Version B).
  • 3.3 V, 5 V, an.

More Datasheets from onsemi

Part Number Description
NCV57091B IGBT/MOSFET Gate Driver
NCV57091C IGBT/MOSFET Gate Driver
NCV57090A IGBT/MOSFET Gate Driver
NCV57090B IGBT/MOSFET Gate Driver
NCV57090C IGBT/MOSFET Gate Driver
NCV57090D IGBT/MOSFET Gate Driver
NCV57090E IGBT/MOSFET Gate Driver
NCV57090F IGBT/MOSFET Gate Driver
NCV5700 High Current IGBT Gate Driver
NCV57000 IGBT