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  ON Semiconductor Electronic Components Datasheet  

NCV8401B Datasheet

Self-Protected Low-Side Driver

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NCV8401A, NCV8401B
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8401A/B is a three terminal protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.
Features
Short Circuit Protection
Thermal Shutdown with Automatic Restart
Over Voltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Typical Applications
Switch a Variety of Resistive, Inductive and Capacitive Loads
Can Replace Electromechanical Relays and Discrete Circuits
Automotive / Industrial
www.onsemi.com
VDSS
(Clamped)
42 V
RDS(ON) TYP
23 mW @ 10 V
ID MAX
(Limited)
33 A*
*Max current may be limited below this value
depending on input conditions.
Drain
Gate
Input
Overvoltage
Protection
ESD Protection
Temperature Current Current
Limit
Limit Sense
Source
MARKING
DIAGRAM
DPAK
CASE 369C
STYLE 2
Y
WW
xxxxx
G
= Year
= Work Week
= 8401A or 8401B
= Pb−Free Package
1
YWW
2 NCV
xxxxxG
3
1 = Gate
2 = Drain
3 = Source
ORDERING INFORMATION
Device
Package
Shipping
NCV8401ADTRKG DPAK 2500/Tape & Reel
(Pb−Free)
NCV8401BDTRKG DPAK 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
July, 2017 − Rev. 13
Publication Order Number:
NCV8401/D


  ON Semiconductor Electronic Components Datasheet  

NCV8401B Datasheet

Self-Protected Low-Side Driver

No Preview Available !

NCV8401A, NCV8401B
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage Internally Clamped
VDSS
42
V
Drain−to−Gate Voltage Internally Clamped
Gate−to−Source Voltage
(RGS = 1.0 MW)
VDGR
VGS
42
V
"14
V
Drain Current − Continuous
ID
Internally Limited
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
PD
W
1.1
2.0
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
1.6
°C/W
110
60
Single Pulse Drain−to−Source Avalanche Energy
EAS
(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 3.65 Apk, L = 120 mH, RG = 25 W, TJstart = 150°C) (Note 3)
800
mJ
Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 3.0 W, td = 400 ms)
Operating Junction Temperature
VLD
65
V
TJ
−40 to 150
°C
Storage Temperature
Tstg
−55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Minimum FR4 PCB, steady state.
2. Mounted onto a 2square FR4 board
(1square, 2 oz. Cu 0.06thick single−sided, t = steady state).
3. Not subject to production testing.
+
ID
IG
+
VGS
GATE
DRAIN
SOURCE
VDS
Figure 1. Voltage and Current Convention
www.onsemi.com
2



Part Number NCV8401B
Description Self-Protected Low-Side Driver
Maker ON Semiconductor
Total Page 3 Pages
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NCV8401B Datasheet PDF





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