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  ON Semiconductor Electronic Components Datasheet  

NCV8406B Datasheet

Self-Protected Low-Side Driver

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Self-Protected Low Side
Driver with Temperature
and Current Limit
65 V, 7.0 A, Single NChannel
NCV8406A, NCV8406B
NCV8406A/B is a three terminal protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.
Features
Short Circuit Protection
Thermal Shutdown with Automatic Restart
Over Voltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
These Devices are Faster than the Rest of the NCV Devices
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Switch a Variety of Resistive, Inductive and Capacitive Loads
Can Replace Electromechanical Relays and Discrete Circuits
Automotive / Industrial
www.onsemi.com
VDSS
(Clamped)
65 V
RDS(on) TYP
210 mW
ID TYP
(Limited)
7.0 A
Drain
Gate
Input
Overvoltage
Protection
ESD Protection
Temperature Current Current
Limit
Limit Sense
Source
4
123
SOT223
CASE 318E
STYLE 3
4
MARKING
DIAGRAM
DRAIN
4
AYW
xxxxxG
G
12 3
GATE
SOURCE
DRAIN
12
3
DPAK
CASE 369C
GATE
DRAIN
SOURCE
1
2 YWW
NCV
3 xxxxxG
A
= Assembly Location
Y
= Year
W, WW = Work Week
xxxxx = 8406A or 8406B
G or G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
January, 2020 Rev. 9
Publication Order Number:
NCV8406/D


  ON Semiconductor Electronic Components Datasheet  

NCV8406B Datasheet

Self-Protected Low-Side Driver

No Preview Available !

NCV8406A, NCV8406B
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage Internally Clamped
GatetoSource Voltage
Drain Current
Total Power Dissipation SOT223 Version
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
Continuous
VDSS
VGS
ID
PD
60
Vdc
"14
Vdc
Internally Limited
W
1.25
1.81
Total Power Dissipation DPAK Version
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
PD
W
1.31
2.31
Thermal Resistance SOT223 Version
JunctiontoSoldering Point
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
Thermal Resistance DPAK Version
JunctiontoSoldering Point
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
Single Pulse Inductive Load Switching Energy
(Starting TJ = 25°C, VDD = 50 Vdc, VGS = 5.0 Vdc,
IL = 2.1 Apk, L = 50 mH, RG = 25 W)
°C/W
RqJS
7.0
RqJA
100
RqJA
69
°C/W
RqJS
1.0
RqJA
95
RqJA
54
EAS
110
mJ
Load Dump Voltage (VGS = 0 and 10 V, RI = 2 W, RL = 7 W, td = 400 ms)
VLD
75
V
Operating Junction Temperature Range
TJ
40 to 150
°C
Storage Temperature Range
Tstg
55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface mounted onto minimum pad size (100 sq/mm) FR4 PCB, 1 oz cu.
2. Mounted onto 1square pad size (700 sq/mm) FR4 PCB, 1 oz cu.
+
ID
IG
+
VGS
GATE
DRAIN
SOURCE
VDS
Figure 1. Voltage and Current Convention
www.onsemi.com
2



Part Number NCV8406B
Description Self-Protected Low-Side Driver
Maker ON Semiconductor
Total Page 3 Pages
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NCV8406B Datasheet PDF





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