NCV8440 - Protected Power MOSFET

onsemi

Key Features

Diode Clamp Between Gate and Source.
ESD Protection.
Human Body Model 5000 V.
Active Over.
Voltage Gate to Drain Clamp.
Scalable to Lower or Higher RDS(on).
Internal Series Gate Resistance.
These are Pb.
Free Devices Benefits.
High Energy Capability for Inductive Loads.
Low Switching Noise Generation.

NCV8440 protected power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	NCV8440
Manufacturer	onsemi
File Size	223.27 KB
Description	Protected Power MOSFET
Datasheet	NCV8440 Datasheet

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NCV8440A	Protected Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NCV8440, NCV8440A Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Applications • Automotive and Industrial Markets: Solenoid Drivers, Lamp Drivers, Small Motor Drivers • NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable www.onsemi.com VDSS (Clamped) 52 V RDS(ON) TYP 95 mW @ 10 V ID MAX 2.