Datasheet4U Logo Datasheet4U.com

NDBA180N10B - Power MOSFET

Key Features

  • Ultra Low On-Resistance.
  • Low Gate Charge.
  • High Speed Switching.
  • 100% Avalanche Tested.
  • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) PW≤10μs, duty cycle≤1% Power Dissipation Tc=25°C VDSS VGSS ID IDL IDP PD Junction Temperature Tj Storage Temperature Ts.

📥 Download Datasheet

Full PDF Text Transcription for NDBA180N10B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NDBA180N10B. For precise diagrams, and layout, please refer to the original PDF.

NDBA180N10B Power MOSFET 100V, 2.8mΩ, 180A, N-Channel www.onsemi....

View more extracted text