Full PDF Text Transcription for NDDL01N60Z (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NDDL01N60Z. For precise diagrams, and layout, please refer to the original PDF.
NDDL01N60Z, NDTL01N60Z N-Channel Power MOSFET 600 V, 15 W Features • 100% Avalanche Tested • Gate Charge Minimized • Zener−protected • These Devices are Pb-Free, Halogen ...
View more extracted text
arge Minimized • Zener−protected • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD NDT Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current Steady State, TC = 25°C (Note 1) Continuous Drain Current Steady State, TC = 100°C (Note 1) Power Dissipation Steady State, TC = 25°C Pulsed Drain Current, tp = 10 ms Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (ID = 0.8 A) Peak Diode Recovery (Note 2) VDSS VGS ID ID PD IDM IS EAS dv/dt 600 ±30 0.8 0.25 V V A 0.5 0.15 A 26 2 W 3.