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  ON Semiconductor Electronic Components Datasheet  

NDF04N60ZH Datasheet

N-Channel Power MOSFET

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NDF04N60ZH pdf
NDF04N60ZH
Product Preview
N-Channel Power MOSFET
600 V, 2.0 W
Features
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol Typ Unit
DraintoSource Voltage
Continuous Drain Current RqJC
VDSS
ID
600
4.4
(Note 2)
V
A
Continuous Drain Current RqJC, TA = 100°C
ID 2.8 A
(Note 2)
Pulsed Drain Current,
VGS @ 10 V
Power Dissipation RqJC (Note 1)
GatetoSource Voltage
Single Pulse Avalanche Energy, ID = 4.0 A
ESD (HBM) (JESD22A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H. 30%, TA = 25°C)
(Figure 14)
IDM
PD
VGS
EAS
Vesd
VISO
18
(Note 2)
28
±30
120
3000
4500
A
W
V
mJ
V
V
Peak Diode Recovery
dv/dt
4.5 V/ns
(Note 3)
Continuous Source Current
(Body Diode)
IS 4.0 A
Maximum Temperature for Soldering Leads
TL 260 °C
Operating Junction and
Storage Temperature Range
TJ, Tstg
55 to
150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1sq. pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Limited by maximum junction temperature
3. ISD = 4.0 A, di/dt 100 A/ms, VDD BVDSS, TJ = +150°C
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
VDSS
600 V
RDS(ON) (MAX) @ 2 A
2.0 W
MARKING
DIAGRAM
TO220FP
CASE 221AH
NDF04N60ZH
AYWW
Gate
Source
Drain
A = Location Code
Y = Year
WW = Work Week
H = Halogen Free Package
NChannel
D (2)
G (1)
S (3)
ORDERING INFORMATION
Device
NDF04N60ZH
Package
TO220FP
Shipping
50 Units / Rail
(In Development)
© Semiconductor Components Industries, LLC, 2011
April, 2011 Rev. P0
1
Publication Order Number:
NDF04N60ZH/D


  ON Semiconductor Electronic Components Datasheet  

NDF04N60ZH Datasheet

N-Channel Power MOSFET

No Preview Available !

NDF04N60ZH pdf
NDF04N60ZH
THERMAL RESISTANCE
Parameter
JunctiontoCase (Drain)
JunctiontoAmbient Steady State (Note 4)
Symbol
RqJC
RqJA
Value
4.4
50
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 1 mA
Reference to 25°C,
ID = 1 mA
BVDSS
DBVDSS/
DTJ
600
0.6
V
V/°C
DraintoSource Leakage Current
VDS = 600 V, VGS = 0 V
25°C
125°C
IDSS
1 mA
50
GatetoSource Forward Leakage
ON CHARACTERISTICS (Note 5)
VGS = ±20 V
IGSS
±10 mA
Static DraintoSource
OnResistance
VGS = 10 V, ID = 2.0 A
RDS(on)
1.8 2.0
W
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = VGS, ID = 50 mA
VDS = 15 V, ID = 2.0 A
VGS(th)
3.0
4.5
gFS 3.3
V
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Total Gate Charge
GatetoSource Charge
GatetoDrain (“Miller”) Charge
VDD = 300 V, ID = 4.0 A,
VGS = 10 V
Plateau Voltage
Gate Resistance
RESISTIVE SWITCHING CHARACTERISTICS
Ciss
Coss
Crss
Qg
Qgs
Qgd
VGP
Rg
535 pF
62
14
19 nC
3.9
10
6.3 V
4.7 W
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
td(on) 13 ns
VDD = 300 V, ID = 4.0 A,
VGS = 10 V, RG = 5 W
tr
td(off)
9.0
24
tf 15
SOURCEDRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 4.0 A, VGS = 0 V
VSD
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0 V, VDD = 30 V
IS = 4.0 A, di/dt = 100 A/ms
trr
Qrr
4. Insertion mounted
5. Pulse Width 380 ms, Duty Cycle 2%.
1.6 V
285 ns
1.3 mC
http://onsemi.com
2


Part Number NDF04N60ZH
Description N-Channel Power MOSFET
Maker ON Semiconductor
Total Page 6 Pages
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