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NDF08N60Z
N-Channel Power MOSFET 600 V, 0.95 W
Features
• Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF08N60Z Unit
Drain−to−Source Voltage
VDSS
600
V
Continuous Drain Current RqJC (Note 1)
ID
8.4
A
Continuous Drain Current RqJC TA = 100°C (Note 1)
ID
5.3
A
Pulsed Drain Current, VGS @ 10 V
IDM
30
A
Power Dissipation
Gate−to−Source Voltage
Single Pulse Avalanche Energy, ID = 7.5 A
ESD (HBM) (JESD 22−A114)
PD VGS EAS
Vesd
36
W
±30
V
235
mJ
4000
V
RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14)
Peak Diode Recovery (Note 2)
VISO
4500
V
dv/dt
4.
NDF08N60Z Datasheet
